首页> 美国政府科技报告 >Metal/GaP(110) Interface Formation: Ti, Pd, Ag, and Au Adatom Deposition. (Reannouncement with New Availability Information).
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Metal/GaP(110) Interface Formation: Ti, Pd, Ag, and Au Adatom Deposition. (Reannouncement with New Availability Information).

机译:金属/ Gap(110)界面形成:Ti,pd,ag和au吸附原子沉积。 (重新公布新的可用性信息)。

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摘要

Contacts between metals and III-V compound semiconductors have been extensively studied with photoemission, especially for GaAs- and InP-based systems, and the results are complemented by insight gained with a wide variety of other techniques. However, relatively few studies of metal/GaP interface formation have been reported. Such studies are of fundamental importance in understanding the physical, chemical, and structural properties of these junctions, and they provide guidelines for the design of devices, multilayers, and composites. Despite substantial progress, the mechanism behind adatom-induced substrate disruption has been elusive, and the understanding of this phenomenon, common for a larger class of metal semiconductor systems, is crucial in the studies of interface formation. Indeed, the conditions of the surface established at low coverage are reflected in subsequent growth and atom distribution.

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