• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国政府科技报告 >Ensemble Monte Carlo Simulation of Real Space Transfer (NERFET/CHINT) (Negative Differential Resistance Field Effect Transistor/Charge Injection Transistor) Devices
【24h】

Ensemble Monte Carlo Simulation of Real Space Transfer (NERFET/CHINT) (Negative Differential Resistance Field Effect Transistor/Charge Injection Transistor) Devices

机译：实空间转移的集合蒙特卡罗模拟（NERFET /正泰）（负差分电阻场效应晶体管/电荷注入晶体管）器件

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The first self-consistent particle-field ensemble Monte Carlo model for real space transfer (NERFET/CHINT) devices will be presented. The simulations performed are in agreement with experiments and reproduce all prominent features of NERFET/CHINT structures such as, negative differential resistance, saturation of drain and substrate (injection) current a high source-to-drain voltages, and the negative transconductance Delta I sub D, sat / Delta V sub sub < O ) in the saturated drain current. Negative differential resistance (NDR) can be achieved through real-space electron transfer which is based on the emission of electrons from one semiconductor layer in the presence of high electric fields parallel to the layers. The major advantage of this mechanism over the Gunn effect is that the material parameters such as mobility ratios of adjacent layers, barrier heights, layer thicknesses can be engineered to control peak-to-valley ratios, device speeds and NDR threshold voltages. Recently a number of devices, namely negative differential resistance field effect transistor (NERFET) and charge injection transistor (CHINT), have been proposed and experimentally verified (Luryi, 1985). The purpose of this paper is to present our Monte Carlo model for the real space transfer transistors (NERFET/CHINT) and summarize our simulations which are in agreement with experiments.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号