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首页> 美国政府科技报告 >Fundamental Oscillations Up to 200 GHz in Resonant Tunneling Diodes and New Estimates of Their Maximum Oscillation Frequency from Stationary-State Tunneling Theory
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Fundamental Oscillations Up to 200 GHz in Resonant Tunneling Diodes and New Estimates of Their Maximum Oscillation Frequency from Stationary-State Tunneling Theory

机译：谐振隧穿二极管中高达200 GHz的基本振荡及其固定状态隧穿理论的最大振荡频率的新估计

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Fundamental oscillations have been measured up to 200 GHz in resonant-tunneling diodes at room temperature. Oscillations in the range 102-112 GHz were achieved with diodes mounted in a WR-6 waveguide resonator, and the peak output power in this range was approximately 5 micro W. The same diodes oscillated between 192 and 201 GHz and generated about 0.2 micro W when mounted in a WR-3 resonator. The estimated maximum oscillation frequency (f max) for these devices is 244 GHz, assuming the average drift velocity across the depletion layer to be 4 x ten to the 7th power cm per sec. This estimate has been obtained form a new phenomenological theory of the negative differential conductance which accounts for the frequency-dependent spreading resistance and transit-time delay. The theory is also used to show that diodes having f max exceeding 600 GHz are feasible simply by modifying the doping profile in the regions on either side fo the double-barrier structure. (RH)

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