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Measurement Methods for Accurate Microwave Characterization and Modeling of MESFET Chips

机译：用于精确微波表征和mEsFET芯片建模的测量方法

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The subject of accurate measurement and modeling oof three-terminal chip devices such as bipolar junction and field-effect transistors has been addressed by others with varying degrees of success. This paper discusses a two-tier approach for determining highly accurate wide-band scattering parameters of chip GaAs MESFETs that are referenced at the bonding pads of the device. In a two-tier approach the first level of characterization determines error corrections for a measurement system. The second level is characterization of any test fixture used in the measurement of the device. The discussion is directed at the second level of characterization in which methods of one-port untermination and deembedding are extended to two-port measurements and a technique known as 'cold chip' parasitic error correction is introduced which makes possible acurate placement of the S-parameter reference planes at the terminals on the chip device. Microwave modeling of the GaAs MESFET can be approached for two different directions, that of device physics and that of device measurements. This paper examines two different measurements-based modeling methods in which accurate chip level S-parameter data is a necessity.

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作者
Peck, D. E.;
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年度 1985
页码 p.1-275
总页数 275
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field effect transistors; Bipolar systems; Junctions; Measurement; Methodology; Transistors; Broadband; Parameters; Scattering;

机译：场效应晶体管;双极系统;结;测量;方法;晶体管;宽带;参数;散射;

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专利

1. Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design [J] . Tellez J.R., Mezher K. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 1994,第12期

机译：用于微波非线性电路设计的GaAs MESFET的计算有效且精确的电容模型
2. An accurate MESFET model for linear and microwave circuit design [J] . Scheinberg N., Bayruns R.J. IEEE Journal of Solid-State Circuits . 1989,第2期

机译：用于线性和微波电路设计的精确MESFET模型
3. A highly accurate microwave method for permittivity determination using corrected scattering parameter measurements [J] . Kadiroglu F., Hasar U.C. Journal of Electromagnetic Waves and Applications . 2010,第16期

机译：使用校正的散射参数测量来确定介电常数的高精度微波方法
4. A Measurement Method for Accurate Characterization and Modeling of MESFET Chips [C] . Peck D.E., Peterson D.F. IEEE MTT-S International Microwave Symposium Digest . 1981

机译：MESFET芯片的精确表征和建模的测量方法
5. A wideband two-layer microwave measurement method for the electrical characterization of thin materials. [D] . Williams, Trevor Cameron. 2002

机译：一种宽带两层微波测量方法，用于薄材料的电表征。
6. A Microwave Method for Dielectric Characterization Measurement of Small Liquids Using a Metamaterial-Based Sensor [O] . Weina Liu, Haoran Sun, Lei Xu 2018

机译：基于超材料的传感器的微波液体小体积介电特性测量方法
7. Low frequency dispersion and operation point dependence measurements for nonlinear microwave MESFET modelling [O] . Fernandez T., Mediavilla A., Tazon A., 1992

机译：非线性微波MESFET建模的低频分散和工作点相关性测量
8. Microwave Characterization of GaAs MESFET and the Verification of Device Model. [R] . Cooper, J. F., Gupta, M. S. 1976

机译：Gaas mEsFET的微波表征及器件模型的验证。

Measurement Methods for Accurate Microwave Characterization and Modeling of MESFET Chips

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