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Oxide Charge Characteristics of Low Temperature MOS (Metal-Oxide-Silicon) Oxide Films

机译：低温mOs（金属氧化物 - 硅）氧化物薄膜的氧化物电荷特性

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The effects of annealing sequence were studied on three types of silicon dioxide films fabricated at approximately 700 deg C. The oxide and interface charge characteristics of capacitors incorporating these oxides were measured. Results were compared with data from capacitors fabricated on a standard oxide film, produced by dry thermal oxidation at 1000 deg C.

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作者
Butler, S. R.; Feigl, F. J.;
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年度 1984
页码 p.1-14
总页数 14
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Dielectric films; Silicon dioxide; Annealing; Integrated circuits; Capacitors; Oxides; Low temperature; Fabrication; Electrical properties; Oxidation;

机译：介电薄膜;二氧化硅;退火;集成电路;电容器;氧化物;低温;制造;电性能;氧化;

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2. Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide [J] . Nazarov A, Osiyuk I, Tyagulskii I, Journal of Luminescence . 2006,第2期

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4. Physical characteristics of very low temperature anodic oxides of polycrystalline Si films [C] . H. Plantier, J. Pelletier, R. A. B. Devine, Symposium on flat-panel displays and sensors-principles, materials and processes . 2000

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Oxide Charge Characteristics of Low Temperature MOS (Metal-Oxide-Silicon) Oxide Films

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