Radiation Characterization of Sequential Logic Circuits.

机译：时序逻辑电路的辐射特性。

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This report describes the test techniques for radiation characterizing medium and large-scale integration (MSI/LSI) sequential logic circuits where few internal nodes are available for testing. Four sequential logic devices, two transistor-transistor-logic (TTL) technology devices and two complementary-metal-oxide-silicon (CMOS) technology devices were characterized. The devices were characterized for gamma dose-rate logic upset, total gamma dose survivability, and neutron fluence survivability. The data has been analyzed to determine the applicability of the testing techniques and procedures. (Author)

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作者
knoll,michael g. bobo,keith;
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年度 1978
页码 1-51
总页数 51
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Logic circuits; Integrated circuits; Radiation effects; Bipolar transistors; Complementary metal oxide semiconductors; Dose rate; Gamma rays; Transient radiation effects; Large scale integrated circuits; Medium scale integrated circuits;

机译：逻辑电路;集成电路;辐射效应;双极晶体管;互补金属氧化物半导体;剂量率;伽马射线;瞬态辐射效应;大规模集成电路;中等规模集成电路;

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专利

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2. Neuron MOS binary-logic integrated circuits. II. Simplifying techniques of circuit configuration and their practical applications [J] . Shibata T., Ohmi T. IEEE Transactions on Electron Devices . 1993,第5期

机译：神经元MOS二进制逻辑集成电路。二。电路配置的简化技术及其实际应用
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5. Logic and layout optimizaton for sequential circuits. [D] . Pan, Peichen. 1995

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Radiation Characterization of Sequential Logic Circuits.

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