首页> 美国政府科技报告 >Electron Bombarded Semiconductor Charge Coupled Device (EBS-CCD) Camera Tube with GaAs Photocathode (Proximity Focused Diode).
【24h】

Electron Bombarded Semiconductor Charge Coupled Device (EBS-CCD) Camera Tube with GaAs Photocathode (Proximity Focused Diode).

机译:具有Gaas光电阴极(邻近聚焦二极管)的电子轰击半导体电荷耦合器件(EBs-CCD)相机管。

获取原文

摘要

This final report describes design, development and fabrication of proximity focused imaging photodiodes known as electron bombarded semiconductor-charge coupled device (EBS-CCD) camera tubes. These ultra high vacuum devices consist of a flat gallium arsenide (GaAs) semitransparent photocathode (one of a class of III-V photocathodes) and a thinned-back charge coupled device (CCD) operated as an intensified charge coupled device (ICCD) in close proximity to each other. (Author)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号