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Electron Beam Semiconductor Device with Mesa Diode,Reliability and Failure Determination.

机译：具有台面二极管的电子束半导体器件，可靠性和失效确定。

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摘要

Ten water cooled EBS devices were fabricated,processed and delivered to ECOM for life and reliability tests. Of 4tubes tested thus far one was operated for 1200hours at a maximum dissipation of 7watts. Others had relatively shorter life times. In depth analysis of failure was carried out on 2tubes.

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作者
garewal, k. bierig, r.;
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年度 1975
页码 1-28
总页数 28
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
electron tubeselectron beams; semiconductors; electron tube targets; semiconductor devices; amplifiers; semiconductor diodes; silicon; reliability(electronics); failure(electronics);

机译：电子管电子束;半导体;电子管靶;半导体器件;放大器;半导体二极管;硅;可靠性（电子）;失效（电子）;

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1. Historical Overview of Semiconductor Device Reliability for Telecommunication Networks—Field Data, Prediction Model of Device Failure Rate, and Wear-out Failure Analyses at NTT [J] . Noboru Shiono, Eisuke Arai, Shinichiro Mutoh NTT Technical Review . 2013,第5期

机译：电信网络中半导体设备可靠性的历史概述-现场数据，设备故障率的预测模型以及NTT的磨损故障分析
2. High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope [J] . Baumann Frieder H. Applied Physics Letters . 2014,第26期

机译：透射电子显微镜中使用纳米束电子衍射的半导体器件中的高精度二维应变映射
3. High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope [J] . Frieder H. Baumann Applied Physics Letters . 2014,第26期

机译：透射电子显微镜中使用纳米束电子衍射的半导体器件中的高精度二维应变映射
4. Comparison of Failure Rates and Reliability of Power Semiconductors in Power Electronic Devices Using Methodologies MIL-HDBK-217F and FIDES [C] . Prodan Ivanov Prodanov, Dobroslav Danilov Dankov Conference on Electrical Machines, Drives and Power Systems . 2021

机译：MIL-HDBK-217F和FIDES的电力电子设备电力电子设备功率半导体失效率和可靠性的比较
5. Molecular design of organic semiconductors for electronic devices and their application in flexible light emitting diodes. [D] . Pandya, Hermona K. 2006

机译：电子设备用有机半导体的分子设计及其在柔性发光二极管中的应用。
6. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics [O] . Yue Sun, Xuanwu Kang, Yingkui Zheng, 2020

机译：通过电感耦合等离子体（ICP）和器件特性优化准垂直GaN肖特基势垒二极管（SBD）的台面蚀刻
7. Reliability Evaluation of Multi-Mechanism Failure for Semiconductor Devices Using Physics-of-Failure Technique and Maximum Entropy Principle [O] . Bo Wan, Ye Wang, Yutai Su, 2020

机译：使用物理 - 故障技术和最大熵原理的半导体器件多机理故障的可靠性评估
8. Degradation, Reliability, and Failure of Semiconductor Electronic Devices [R] . Derenge, M. A., Ervin, M. H., Kirchner, K. W., 2006

机译：半导体电子器件的退化，可靠性和失效

Electron Beam Semiconductor Device with Mesa Diode,Reliability and Failure Determination.

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