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Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

机译：熔体生长的大块铟镓砷和磷化铟铟合金的光电特性

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A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds (GaSb, GaP, GaSbP etc.) can be studied using the method developed in this work.

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Wei, J.;
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年度 2011
页码 1-160
总页数 160
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Optical properties ; Indium arsenides ; Ternary compounds ; Indium phosphides ; Indium gallium arsenides ; Electrical properties ; Group iii compounds ; Group iv compounds ; Group v compounds ; Electron transitions ; Energy bands ; Gallium alloys ; Binary compounds ; Arsenic alloys ; Band gaps ; Bulk materials ; Semiconductors ; Indium alloys ; Energy gaps ; Photoluminescence ; Hall effect ; Electrooptics;

机译：光学性质;砷化铟;三元化合物;磷化铟;砷化铟镓;电性能;Ⅲ族化合物;第iv族化合物;第V族化合物;电子跃迁;能带;镓合金;二元化合物;砷合金;带隙;散装材料;半导体;铟合金;能隙;光致发光;霍尔效应;电光学;

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1. Strain-induced non-linear optical properties of straddling-type indium gallium aluminum arsenic/indium phosphide nanoscale-heterostructures [J] . Alvi P. A. Materials science in semiconductor processing . 2015,第Null期

机译：跨层型铟镓铝砷/磷化铟纳米异质结构的应变诱导非线性光学性质
2. Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response [J] . Hurtado-Castaneda D. M., Herrera-Perez J. L., Arias-Ceron J. S., Materials science in semiconductor processing . 2015,第Null期

机译：液相外延生长砷化铟镓锑锑光电探测器：电特性和光学响应
3. Electrical, optical, and analytical characterization of bulk hydrothermal ZnO crystals doped with indium [J] . Buguo Wang, Michael J. Callahan, Lionel O. Bouthillette, Journal of Crystal Growth . 2011,第1期

机译：掺杂铟的块状热液ZnO晶体的电学，光学和分析表征
4. Bulk ternary indium phosphide arsenide, InP/sub 1-x/As/sub x/: growth and characterization [C] . Bonner, W.A. Indium Phosphide and Related Materials, 1997., International Conference on . 1997

机译：块状三价磷化铟砷化物InP / sub 1-x / As / sub x /：生长和表征
5. Optical and electrical characterization of melt-grown bulk indium gallium arsenide and indium arsenic phosphide alloys [D] . Wei, Jean 2011

机译：熔融生长的块状砷化铟镓和磷化铟砷合金的光电特性
6. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode [O] . Hiroki Hamada 2017

机译：镓铟磷化物的表征及铝镓磷化物体系量子阱激光二极管的研究进展
7. Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm [O] . Johns Steven 1964- 1991

机译：砷化镓铟/铝铟砷化物和砷化镓铝铟砷/铝铟砷化物MQW器件在1.3μm的室温载流子寿命和光学非线性

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

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