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Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

机译：用于紫外线-a和紫外线-B检测的基于硒化锌的肖特基势垒探测器

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Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320:400 nm) and UV-B (280:320 nm) filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50mA/W and 10mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110mA/W at 375nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

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Naval, V.; Smith, C.; Ryzhikov, V.; Naydenov, S.; Alves, F.;
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年度 2010
页码 1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Ultraviolet detectors ; Zinc selenides ; Schottky barrier devices ; Photodetectors ; Wide gap semiconductors ; Ultraviolet spectra ; Ultraviolet filters ; Response ; Detectors ; Diodes ; Band spectra;

机译：紫外检测器;硒化锌;肖特基势垒器件;光电探测器;宽间隙半导体;紫外光谱;紫外滤光片;响应;探测器;二极管;波段光谱;

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1. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection [J] . V. Naval, C. Smith, V. Ryzhikov, Advances in OptoElectronics . 2010,第Null期

机译：基于硒化锌的肖特基势垒检测器用于紫外线A和紫外线B检测
2. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection [J] . V.Naval, C.Smith, V.Ryzhikov, Advances in OptoElectronics . 2010,第2期

机译：基于硒化锌的肖特基势垒检测器用于紫外线A和紫外线B检测
3. Fabrication and Study Zinc Sulfide Schottky Barrier Detectors [J] . Salma M. Shaban, Nada M. Saeed, Raad M. S. Al-Haddad Indian Journal of Science and Technology . 2011,第4期

机译：硫化锌肖特基势垒探测器的制作与研究
4. An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection [C] . Mandal Krishna C., Chaudhuri Sandeep K., Nguyen Khai 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference . 2013

机译：4H-SiC n型外延肖特基势垒探测器在高分辨率核探测中的应用概述
5. Zinc oxide heterojunctions and Schottky junctions for ultraviolet detectors. [D] . Wang, Ting. 2005

机译：紫外探测器的氧化锌异质结和肖特基结。
6. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [O] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, -1

机译：具有低肖特基势垒接触的紫外到红外悬浮金属-半导体-金属介观多层MoS2宽带探测器中的超高光响应性
7. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection [O] . Naval V., Smith C., Ryzhikov V., 2010

机译：基于硒化锌的肖特基势垒检测器用于紫外线A和紫外线B检测

Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

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