首页> 美国政府科技报告 >Record Pulsed Power Demonstration of a 2 micron GaSb-Based Optically Pumped Semiconductor Laser Grown Lattice-Mismatched on an AlAs/GaAs Bragg Mirror and Substrate (Postprint)
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Record Pulsed Power Demonstration of a 2 micron GaSb-Based Optically Pumped Semiconductor Laser Grown Lattice-Mismatched on an AlAs/GaAs Bragg Mirror and Substrate (Postprint)

机译:记录基于2微米Gasb的光泵浦半导体激光器生长晶格的脉冲功率演示 - 在alas / Gaas布拉格反射镜和基板上不匹配(后印刷)

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摘要

An optically pumped semiconductor laser resonant periodic gain structure, grown lattice-mismatched on an AlAs/GaAs Bragg mirror, exhibits a peak pulsed power of 70 W when pumped with a pulsed 1064 nm neodymium doped yttrium aluminum garnet laser.

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