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首页> 美国政府科技报告 >Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range
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Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range

机译：ZnO掺杂不对称问题：现状与展望。实现和实现p型ZnO的实验和理论努力的回顾，适用于蓝/紫外光谱范围的发光光电器件

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摘要

ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fueled by its wide direct band gap (3.3 eV at room temperature) and large exciton binding energy (60 meV) making this material, when alloyed with e.g. Cd and Mg, especially attractive for light emitters in the blue/UV spectral region. Unfortunately, as with other wide-gap semiconductors, ZnO suffers from the doping asymmetry problem, in that the n-type conductivity can be obtained rather easily, but p-type doping proved to be a formidable challenge. This doping asymmetry problem (also dubbed as the p-type problem in ZnO) is preventing applications of ZnO in light-emitting diodes and potential laser diodes. In this article, we provide a critical review of the current experimental efforts focused on achieving p-type ZnO and discuss the proposed approaches which could possibly be used to overcome the p-type problem.

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