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AlInN HEMT Grown on SiC by Metalorganic Vapor Phase Epitaxy for Millimeter-Wave Applications

机译：用于毫米波应用的金属有机气相外延生长在siC上的alInN HEmT

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In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (less than 1%). The low R(sh) of 215 (omega)/sq was obtained with an excellent standard deviation of 1.1% across 3 inches wafers.

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Guo, S.; Gao, X.; Gorka, D.; Chung, J. W.; Wang, H.;
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年度 2009
页码 1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Epitaxial growth ; Millimeter waves ; Organometallic compounds ; Silicon carbides ; Barriers ; Charge density ; Gates(Circuits) ; Hall effect ; Mobility ; Test and evaluation ; Transconductance ; Vapor phases;

机译：外延生长;毫米波;有机金属化合物;碳化硅;阻挡层;电荷密度;栅极（电路）;霍尔效应;迁移率;测试和评估;跨导;气相;

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专利

1. AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications [J] . Shiping Guo, Xiang Gao, Daniel Gorka, Physica status solidi . 2010,第6期

机译：通过金属有机气相外延在SiC上生长的AlInN HEMT用于毫米波应用
2. High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy [J] . Akagi Takanobu, Kozuka Yugo, Ikeyama Kazuki, Annales de l'I.H.P . 2020,第12期

机译：高质量的alinn / GaN分布式Bragg反射器由金属机会气相外延种植
3. High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy [J] . Jing Zhang, Songul Kutlu, Guangyu Liu, Journal of Applied Physics . 2011,第4期

机译：金属有机气相外延生长AlInN合金的塞贝克系数的高温特性
4. High-Quality and High-Mobility AlInN/GaN Superlattices Grown by Metalorganic Vapor Phase Epitaxy [C] . S Yamaguchi, Y Iwamura, M Kosaki, International symposium on compound semiconductor . 2002

机译：由金属有机气相外延生长的高质量和高机动性alinn / GaN超晶格
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films [O] . Akira Kusaba, Guanchen Li, Pawel Kempisty, 2019

机译：有机金属气相外延过程中GaN（0001）和（000-1）的CH4吸附概率及其与膜中碳污染的关系
7. GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices [O] . Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, 2001

机译：选择性区域金属有机气相外延生长的GaAs点线耦合结构及其在单电子器件中的应用

AlInN HEMT Grown on SiC by Metalorganic Vapor Phase Epitaxy for Millimeter-Wave Applications

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