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Bandgap Tuning of GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy.

机译：用分子束外延生长Gaas / Gaassb核壳纳米线的带隙调谐。

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Kasanaboina, P. K.; Ojha, S. K.; Sami, S. U.; Reynolds, C. J. L.; Liu, Y.; Iyer, S.;
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年度 2015
页码 1-13
总页数 13
原文格式 PDF
正文语种 eng
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1. Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy [J] . Sami Shifat Us, Ojha Sai Krishna, Kasanaboina Pavan Kumar, Semiconductor science and technology . 2015,第10期

机译：通过分子束外延生长的GaAs / GaAsSb核壳纳米线的带隙调谐
2. GaAsSb/InAs core-shell nanowires grown by molecular-beam epitaxy [J] . Li Lixia, Pan Dong, So Hyok, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：通过分子束外延生长的Gaassb / Inas Core-Shell纳米线
3. Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy [J] . Ahmad Estiak, Ojha S. K., Kasanaboina P. K., Semiconductor science and technology . 2017,第3期

机译：Ga辅助分子束外延生长的GaAs1-xSbx轴向纳米线的带隙调谐
4. Carrier transport in molecular beam epitaxially grown GaAs/InAs core-shell nanowires [C] . Ruda H.E., Salfi J., Saveliev I., Nanoelectronics Conference (INEC), 2010 . 2010

机译：分子束外延生长的GaAs / InAs核壳纳米线中的载流子传输
5. Bandgap Tuning of GaAs/GaAsSb(N) Core-Shell Nanowires Grown by Molecular Beam Epitaxy [D] . Kasanaboina, Pavan Kumar. 2016

机译：通过分子束外延生长的GaAs / Gaassb（N）核心壳纳米线的带隙调谐
6. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy [O] . Xian Gao, Zhipeng Wei, Fenghuan Zhao, -1

机译：分子束外延生长GaAsSb外延层中的局部状态研究
7. Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy. [O] . Cirlin G.E., Dubrovskii V.G., Samsonenko Y.B., 2010

机译：通过分子束外延在Si（111）上生长的自催化纯锌闪烁GaAs纳米线。

Bandgap Tuning of GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy.

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