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Next Generation Nanotechnology Assembly Fabrication Methods: A Trend Forecast

机译：下一代纳米技术装配制造方法：趋势预测

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Today, the continued success of many industries, especially the microelectronics industry, relies upon the ability to fabricate structures with nanometer precision. The efforts toward developing nanometer-scale fabrication methods fall loosely into two fields. One field seeks to extend the current planar, deposit-pattern-etch paradigm used for complementary metal oxide semiconductors (CMOS). This is a top-down approach. The other seeks new techniques to assemble structures without handling individual particles: self- assembly. These techniques take a bottom-up approach. The fundamental limits of the materials used in the planar CMOS process, which has been the basis for the semiconductor industry for the past 30 years, are now being reached. This is driving industry to fund research to find new fabrication methods. The thesis of this paper is that as new fabrication methods are mastered in the quest to continue advancement in computer processing, these techniques will propagate to other applications with the potential to threaten U.S. national security interests.

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