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首页> 美国政府科技报告 >Terahertz Plasmon-Induced Conductance Effects in Semiconductor Heterostructures
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Terahertz Plasmon-Induced Conductance Effects in Semiconductor Heterostructures

机译：太赫兹等离子体激元诱导半导体异质结构中的电导效应

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Experimental investigation of the coupling of free space radiation to surface plasmons by silver or Pd2Si gratings was performed for different grating profiles at CO2 laser wavelengths. Comparison of the results with the theory of Hessel and Liner 1965 and of Wheeler, Arakawa, and Ritchie 1976 suggests that the former gives the more accurate description in the long-wave IR. For that theory, the comparison gives an empirical non-linear relation between the physical depth of the grating grooves and the surface-impedance modulation amplitude. The Hessel-Oliner theory predicts stronger photon-plasmon coupling for the higher impedance silicide, suggesting that these conductors may be preferable for silicon-based IR plasmonic devices. Shifts and broadening of the surface Plasmon resonances with increasing grating height are also reported and found to be weaker than similar effects observed previously at visible wavelengths.

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