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Scalable SiC Power Switches for Applications in More Electric Vehicles (Preprint)

机译：可扩展的siC电源开关，适用于更多电动汽车（预印本）

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摘要

SiC JFETs can be manufactured in three different conduction types; fully normally off (capable of blocking BVDS(max) at VGS = 0V), quasi-off (previously referred to as bias-enhanced capable of blocking half BVDS(max) at VGS = 0V, and (hard) normally on (unable to block any amount of voltage at VGS = 0V. There exists trade-offs between each of the three conduction types mostly evident in the forward current ratings and specific on resistance. Due to the structure of the device the normally on device yields the greatest forward current ratings and lowest on resistance. The quasi-off device that is design to block up to half of the maximum blocking capabilities at VGS = 0, typically results in 1.5x reduction in forward current with the normally off device demonstrating greater than 2x reduction in forward current ratings. Because of the large reduction in conduction current capabilities of the normally off device, the normally on and quasi-off devices are more strongly promoted.

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