• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国政府科技报告 >Fabrication of Highly Ordered Anodic Aluminium Oxide Templates on Silicon Substrates
【24h】

Fabrication of Highly Ordered Anodic Aluminium Oxide Templates on Silicon Substrates

机译：在硅衬底上制备高度有序的阳极氧化铝模板

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The controlled fabrication of highly ordered anodic aluminium oxide (AAO) templates of unprecedented pore uniformity directly on Si, enabled by new advances on two fronts -- direct and timed anodisation of a high-purity Al film of unprecedented thickness (50 micrometres) on Si, and anodizing a thin but pre- textured Al film on Si, has been reported. To deposit high-quality and ultra- thick Al on a non-compliant substrate, a prerequisite for obtaining highly ordered pore arrays on Si by self-organisation while retaining a good adhesion, a specially designed process of e-beam evaporation followed by in situ annealing has been deployed. To obtain an AAO template with the same high degree of ordering and uniformity but from a thin Al film, which is not achievable by the self-organisation alone, pre-patterning of the thin Al surface by reactive ion etching using a free-standing AAO mask that was formed in a separate process was performed. The resultant AAO/Si template provides a good platform for integrated growth of nanotube, nanowire or nanodot arrays on Si. Template-assisted growth of carbon nanotubes (CNTs) directly on Si was demonstrated via a chemical vapour deposition method. By controllably removing the AAO barrier layer at the bottom of the pores and partially etching back the AAO top surface, new CNT/Si structures were obtained with potential applications in field emitter, sensors, oscillators and photodetectors.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号