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首页> 美国政府科技报告 >Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends.
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Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends.

机译：超柔性，不可见的薄膜晶体管，由非晶金属氧化物/聚合物沟道层混合物制成。

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Metal oxide (MO) semiconductors have attracted considerable attention for next-generation electronic devices because of their high carrier mobilities, even in the amorphous state, and good environmental stability. [15] Equally important, the high optical transparency of MO semiconductors can enable fully transparent thin-film transistors (TFTs), which are essential for the fabrication of invisible circuits and to increase the aperture ratio of active-matrix organic light-emitting diode (AMOLED) and liquid-crystal (LC) displays. [ 6 10 ] Therefore, since the first report of a fully transparent MO-based TFT in 2003, [13] extensive academic and industrial efforts have focused on enhancing device performance for both opaque and transparent applications. [11,12] Nevertheless, the best performing MO TFTs are typically fabricated by capital-intensive physical and chemical vapor deposition processes. Thus, a key issue for inexpensive large-scale roll-to-roll production is to enable MO TFT manufacturing with solution-based process methodologies. Another key feature of amorphous MO semiconductors is tolerance to mechanical stress, a requirement for device fabrication and utilization on flexible substrates.

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