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Effect of Optical Excitation Energy on the Red Luminescence of Eu(3+) in GaN.

机译:光学激发能对GaN中Eu(3+)红色发光的影响。

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摘要

Photoluminescence (PL) excitation spectroscopy mapped the photoexcitation wavelength dependence of the red luminescence (sup 5 D sub 0 to (sup 7 F sub 2d)) transition from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient energy transfer process. However, for excitation energies above or below the GaN bound exciton energy, the decaying luminescence indicates excitation wavelength- and temperature-dependent energy transfer influenced by intrinsic and Eu(3+)-related defects.

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