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Engineering Intersubband Nonlinearities in GaN/AlGaN Coupled Quantum Wells for Optimised Performance in wide Bandwidth Applications

机译：GaN / alGaN耦合量子阱中工程子带间非线性在宽带宽应用中的优化性能

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We investigate nonlinear optical properties of coup led GaN/AlGaN quantum wells and show that one can engineer the response time and nonlinear phase shift within wide limits and thus achieve optimized performance for a given symbol rate.

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作者
Soref, R. A. ; Sun, G. ; Khurgin, J. B.;
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年度 2005
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Quantum wells; Nonlinear optics; Coupling(Interaction); Optical properties; Broadband; Phase shift; Aluminum gallium nitrides; Gallium nitrides; Optical switching; Reaction time; Symposia; Optimization;

机译：量子阱;非线性光学;耦合（相互作用）;光学性质;宽带;相移;铝镓氮化物;氮化镓;光学转换;反应时间;专题讨论会;优化;

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专利

1. Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells [J] . Y Li, R Paiella Semiconductor science and technology . 2006,第8期

机译：基于库仑诱导的GaN / AlGaN耦合量子阱中的光学非线性的带间全光切换
2. Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 mu m [J] . Chen G., Rapaport R., Mitrofanov O., Physica status solidi, B. Basic research . 2003,第2期

机译：在1.5μm下测量GaN / AlGaN量子阱中子带间跃迁的光学非线性
3. LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN WURTZITE AlGaN/GaN DOUBLE QUANTUM WELLS: EFFECTS OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION [J] . Zhang L Surface review and letters . 2009,第1期

机译：伍兹特AlGaN / GaN双量子阱中线性和非线性子带间折射率的变化：压电效应和自发极化
4. Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm [C] . Gang Chen, R. Rapaport, O. Mitrofanov, International conference on nitride semiconductors . 2003

机译：从GaN / AlGaN量子阱中的三通带转换的光学非线性测量为1.5μm
5. High Performance UV Photodetector and Monolithic Integration of LED and Photodetector on p-GaN/AlGaN/GaN Heterostructure Grown on Si [D] . Lyu, Qifeng. 2021

机译：高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications [O] . REVATHY A, C.S. Boopathi, D. Nirmal 2021

机译：Algan / Ingan / GaN和Inaln / Ingan / GaN HEMTS的设计与分析，高功率宽带宽应用

Engineering Intersubband Nonlinearities in GaN/AlGaN Coupled Quantum Wells for Optimised Performance in wide Bandwidth Applications

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