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Antimonide-Based Multiple Spectra Infrared Imaging Arrays Grown on GaAs by Compliant Epitaxy

机译：通过顺应外延生长在Gaas上的基于锑化物的多光谱红外成像阵列

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The research program consists of formation of a strain-modulated amorphous template and selective area template with a strain-absorbing buried oxide layer formed by lateral oxidation, then develop a two-wavelength infrared imaging array in the 3-8 micron range by integrating InAs(x)Sb(1-x) PINs with GaAs driving electronic circuits.

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作者
Hsieh, K. C. ; Cheng, K. Y.;
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年度 2000
页码 1-34
总页数 34
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Arrays; Epitaxial growth; Infrared images; Antimonides; Frequency; Elastic properties; Electronic equipment; Semiconductor devices; Nitrides; Oxidation; Templates; Infrared detectors; Circuits; Infrared spectra;

机译：砷化镓;阵列;外延生长;红外图像;锑化物;频率;弹性性质;电子设备;半导体器件;氮化物;氧化;模板;红外探测器;电路;红外光谱;

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专利

1. Infrared absorption and current-voltage characteristic of GaAs/ AlGaAs multiple quantum wells on GaAs (1 1 1)A substrate grown by solid source molecular beam epitaxy [J] . H. Li, T. Mei, D.H. Zhang, Journal of Crystal Growth . 2006,第1期

机译：固体源分子束外延生长在GaAs（1 1 1）A衬底上的GaAs / AlGaAs多量子阱的红外吸收和电流-电压特性
2. High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy [J] . Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, 中国物理：英文版 . 2014,第001期

机译：通过分子束外延良好生长的3μm以上高品质中红外InGaAsSb / AlGaInAsSb多量子
3. Packaged 2*2 array of InGaAs/InP multiple quantum well modulators grown by double-sided epitaxy [J] . Rejman-Greene M.A.Z., Scott E.G. Electronics Letters . 1990,第13期

机译：双面外延生长的InGaAs / InP多量子阱调制器的2 * 2封装阵列
4. A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy [C] . Johnston, M.B., Dao, . 1999

机译：分子束外延和金属有机气相外延生长的GaAs / AlGaAs量子阱红外光电探测器的比较研究
5. Bandgap Tuning of GaAs/GaAsSb(N) Core-Shell Nanowires Grown by Molecular Beam Epitaxy [D] . Kasanaboina, Pavan Kumar. 2016

机译：通过分子束外延生长的GaAs / Gaassb（N）核心壳纳米线的带隙调谐
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy [O] . Moon, Pilkyung, Lee, J. D., Ha, S. K., 2012

机译：后热退火对碳纳米管发射光谱的影响由Droplet Epitaxy生长的Gaas / alGaas量子点

Antimonide-Based Multiple Spectra Infrared Imaging Arrays Grown on GaAs by Compliant Epitaxy

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