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首页> 美国政府科技报告 >Titanium Hydride Formation in Ti/Pt Films: the Impact on Ti/Pt/Au-gated III-V FETs
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Titanium Hydride Formation in Ti/Pt Films: the Impact on Ti/Pt/Au-gated III-V FETs

机译：Ti / pt薄膜中的氢化钛形成：对Ti / pt / au-gated III-V FET的影响

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Ti/Pt metal layers are an integral part of the gate stack of many III-V field-effect transistors (FETs). These devices are known to be affected by H2 exposure. In this study, Auger Electron Spectroscopy (AES) measurements of Ti/Pt bilayers are correlated with electrical measurements of InAlAs/InGaAs/ InP FETs fabricated with Ti/Pt/Au gates. The PET measurements show that H2 exposure shifts the device threshold voltage through the piezoelectric effect. AES reveals the formation of titanium hydride (TiH(x)) in Ti/Pt bilayers after identical H2 exposures. These results indicate that the volume expansion associated with TiH(x) formation causes compressive stress in Ti/Pt/Au gates, leading to the piezoelectric effect. After a subsequent recovery anneal in N2, the FET measurements show that V(sub T) recovers. AES measurements confirm that the TiH(x) in hydrogenated Ti/Pt bilayers also decreases after further annealing in N2.

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