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Spin and Energy Resolved Near-Threshold Electron Photoemission from Strained GaAs/GaAsP Heterostructure.

机译：应变Gaas / Gaasp异质结构的自旋和能量分辨近阈电子发射。

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High resolution energy distribution curves (EDC) and a polarization versus energy distribution curves (PEDC) of the electrons photoemitted from strained GaAs/GaAsP are presented. We have found that in the vicinity of the photothreshold the polarization does not vary across the EDC both at room and 120 K temperatures of the cathode, which shows that no depolarization occurs in the band bending region (BBR). The EDC are interpreted in terms of the competition between the electron tunneling in vacuum and hopping between the states in the band bending region localized by the fluctuation potential.

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作者
Drouhin, H. J.; Lampel, G.; Mamaev, Y. A.; Subashiev, A. V.; Yashin, Y. P.;
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年度 1999
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
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关键词
Tunneling(Electronics); Photoelectric emission; Polarization; Threshold effects; Gallium arsenides; Heterojunctions; High resolution; High energy; France; Depolarization; Gallium phosphides; Component report; Foreign reports;

机译：隧道（电子）;光电发射;极化;阈值效应;砷化镓;异质结;高分辨率;高能;法国;去极化;磷化镓;组件报告;外国报告;

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专利

1. High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source [J] . Tetsuya MATSUYAMA, Hisaya TAKIKITA, Hiromichi HORINAKA, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第6A期

机译：作为自旋极化电子源的GaAs-GaAsP应变层超晶格中导带电子的高自旋极化
2. 30-kV spin-polarized transmission electron microscope with GaAs–GaAsP strained superlattice photocathode [J] . Kuwahara M., Kusunoki S., Jin X. G., Applied Physics Letters . 2012,第3期

机译：GaAs–GaAsP应变超晶格光电阴极的30 kV自旋极化透射电子显微镜
3. 30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode [J] . M. Kuwahara, S. Kusunoki, X. G. Jin, Applied Physics Letters . 2012,第3期

机译：带有GaAs-GaAsP应变超晶格光电阴极的30 kV自旋极化透射电子显微镜
4. Spin-polarized electrons from the surfaces of GaAsP strained films [C] . Mamaev, Y., Yashin, . 1996

机译：GaAsP应变膜表面的自旋极化电子
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Direct observation of spin-resolved valence band electronic states from a buried magnetic layer with hard X-ray photoemission [O] . Shigenori Ueda, Yuya Sakuraba 2021

机译：用硬X射线照相中的埋藏磁层直接观察自旋腐蚀价带电子状态
7. TOF electron energy analyzer for spin and angular resolved photoemission spectroscopy [O] . Lebedev G., Jozwiak C., Andresen N., 2008

机译：TOF电子能量分析仪，用于自旋和角分辨光发射光谱
8. Tailoring of Electron and Hole Energies in Strained GaAsP/AlGaAs Quantum WellsUsing Fluorine-Impurity-Induced Layer Disordering [R] . Das, U., David, S., Ramaswamy, R. V. 1992

机译：利用氟杂质诱导层失谐的应变Gaasp / alGaas量子阱中电子和空穴能量的定制

Spin and Energy Resolved Near-Threshold Electron Photoemission from Strained GaAs/GaAsP Heterostructure.

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