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Engineered Semiconductor Nanostructures for Enhanced Nonlinear Optical Propertiesin the Infrared

机译：用于红外增强非线性光学特性的工程半导体纳米结构

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GaAs and InGaAs superlattices have been grown by molecular beam epitaxy. Dopingwas done either in the quantum wells or throughout the superlattices. The quantum wells were first characterized by conventional methods such as PL, FTIR, or Raman spectroscopy. The free electron laser (or another subpicosecond laser source tunable in the mid-infrared) was used to perform second harmonic generation (SHG) measurements and differential transmission measurements using the pump-probe configuration. The results were analyzed using the simplest realistic models available in the literature as well as the most advanced numerical models through collaborations. All measurements were performed in the 3-5 m spectrum region. We have measured for the first time (1) SHG enhancement on resonance with intersubband transitions in the valence band, (2) the hot hole relaxation in p-type quantum wells, and (3) the hot electron relaxation in n-type quantum wells.

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