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SiC Discrete Power Devices-Analysis and Optimization of the Planar 6H-SiCACCUFET; A Planar Lateral Channel SiC Vertical High Power JFET; The Planar Lateral Channel MESFET-A New SiC Vertical Power Device; Growth via Hot Wall Chemical Vapor Deposition Chara

机译：siC离散功率器件 - 平面6H-siCaCCUFET的分析和优化;平面横向沟道siC垂直高功率JFET;平面横向通道mEsFET-a新型siC垂直功率器件;通过热壁化学气相沉积Chara生长

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A novel planar accumulation channel SiC MOSFET structure is reported. Theproblems of gate oxide rupture and poor channel conductance previously reported in SiC UMOSFETs are solved by using a buried P+ layer to shield the channel region. The fabricated 6H-SiC unterminated devices had a blocking voltage of 350 V with a specific on-resistance of 18 m ohms-sq cm at room temperature for a gate bias of only 5 V. This measured specific on-resistance is within 2.5X of the value calculated for the epitaxial drift region (10(exp 16) /cucm, 10 micrometers), which is capable of supporting 1500 V. In addition, a novel planar lateral channel SiC high power JFET is described. Two-dimensional numerical simulations predicted low on-resistances with excellent current saturation and square FBSOA, which have been experimentally confirmed. A novel planar lateral channel SiC MESFET structure with vertical current flow in the drift region is also proposed and demonstrated by modeling and fabrication. A hot wall chemical

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作者
Davis, R. F.; Baliga, B. J.; Tomozawa, H. S.; Shenoy, P. M.;
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年度 1998
页码
总页数 51
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field effect transistors; Silicon carbides; Mosfet semiconductors; High power; Conductivity; Two dimensional; High temperature; Thin films; Gates(Circuits); Chemical vapor deposition; Epitaxial growth; Rupture; Room temperature; Saturation; Drift; Oxides;

机译：场效应晶体管;碳化硅; mosfet半导体;高功率;电导率;二维;高温;薄膜;栅极（电路）;化学气相沉积;外延生长;断裂;室温;饱和度;漂移;氧化物;

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1. A New 4H-SiC Normally Off Lateral Channel Vertical JFET With Extremely Low Power Losses: Source Inserted Double-Gate Structure With a Supplementary Highly Doped Region [J] . Young Chul Choi, Ho-Young Cha, Lester F. Eastman, IEEE Transactions on Electron Devices . 2005,第9期

机译：具有极低功率损耗的新型4H-SiC常关横向沟道垂直JFET：具有辅助高掺杂区的源极插入双栅结构
2. 600-V symmetrical bi-directional power switching using SiC vertical- channel JFETs with reliable edge termination [J] . V. Veliadis, D. Urciuoli, H. C. Ha, Materials science forum . 2011,第期

机译：使用具有可靠边缘端接的SiC垂直沟道JFET的600V对称双向功率开关
3. A Comparison of 1200 V Normally-OFF & Normally-ON Vertical Trench SiC Power JFET Devices [J] . J.B. Casady, D.C. Sheridan, R. Kelley, Materials science forum . 2011,第期

机译：1200 V常关和常开垂直沟道SiC功率JFET器件的比较
4. Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition [C] . H. Fujiwara, K. Danno, T. Kimoto, International Conference on Silicon Carbide and Related Materials 2003 pt.1(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：烟囱型垂直热壁化学气相沉积法快速外延生长具有镜面的厚4H-SiC
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. Approximate Solution for Electroosmotic Flow of Power-Law Fluids in a Planar Microchannel with Asymmetric Electrochemical Boundary Conditions [O] . WooSeok Choi, Sungchan Yun, Du-Soon Choi 2018

机译：具有不对称电化学边界条件的平面微通道中幂律流体的电渗流的近似解
7. SiC Epitaxial Growth by Vertical Hot-Wall Type Chemical Vapor Deposition. [O] . Kunimasa TAKAHASHI, Makoto KITABATAKE 2000

机译：垂直热壁式化学气相沉积的SIC外延生长。

SiC Discrete Power Devices-Analysis and Optimization of the Planar 6H-SiCACCUFET; A Planar Lateral Channel SiC Vertical High Power JFET; The Planar Lateral Channel MESFET-A New SiC Vertical Power Device; Growth via Hot Wall Chemical Vapor Deposition Chara

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