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Deep-Oxide Planar Buried-Channel AlGaAs-GaAs Quantum Well HeterostructureWaveguides with Low Bend Loss

机译:具有低弯曲损耗的深氧化物平面埋沟alGaas-Gaas量子阱异质结构波导

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Data are presented on planar S-bend waveguides fabricated in an Al(x)Ga(1-x)As-GaAs p-n quantum well heterostructure (QWH) crystal by a self-aligned process combining Si impurity-induced layer disordering and wet native oxidation. In the process, a deep, low-index (n approx. l.7) oxide cladding structure is formed, creating a buried channel in the QWH core layers and defining the routing properties of approx. 2.5 micrometers-wide guides. Deep-oxide S-bend waveguides with 100 micrometers offsets exhibit low excess bend losses with a 3 dB transition distance less than 140 micrometers for transverse electric polarization. These bend losses are significantly lower than those measured for oxide-only and disordered-only guides. Excellent optical isolation of the guided signal is observed, indicating very little crosstalk occurs between adjacent guides. jg p.1.

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