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Effect of exciton localization and delocalization on magnetic-field-dependent photoluminescence linewidths in semiconductors.

机译:激子局域化和离域化对半导体中磁场依赖性光致发光线宽的影响。

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摘要

Theory and data are presented for the photoluminescence linewidth in ordered and disordered semiconductor alloys (In(sub 0.48)Ga(sub 0.52)P) at low temperatures. In disordered (ordered) systems, the linewidth is due to exciton localization (exciton-impurity scattering) and increases (decreases) as a function of the field in agreement with the data.

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