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首页> 美国政府科技报告 >Research on high-efficiency, multiple-gap, multi-junction amorphous silicon-based alloy thin-film solar cells. Final subcontract report, March 1, 1987-February 28, 1990.
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Research on high-efficiency, multiple-gap, multi-junction amorphous silicon-based alloy thin-film solar cells. Final subcontract report, March 1, 1987-February 28, 1990.

机译：高效，多间隙，多结非晶硅基合金薄膜太阳能电池的研究。最终分包合同报告，1987年3月1日至1990年2月28日。

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This report documents the results of material development, single- junction solar cell research, and high-efficiency multijunction cell development. High-quality a-Si:Ge:H:F alloys were made with optical band gaps as low as 1.3 eV; high-conductivity microcrystalline p(sup +) and n(sup +) doped alloys were developed with optical band gaps greater than 2 eV. A double-layer antireflection coating was developed, and the cell's quantum efficiency at 400 nm improved from 60% to 77%. A novel solar cell structure was developed using band gap profiling in the intrinsic layer to obtain high efficiency. Single-junction solar cells with a-SiGe:H alloys in the intrinsic layer were fabricated with active-area efficiencies of 9.7%. Dual-gap tandem cells were fabricated with active-area efficiencies of 13%, and triple-junction cells were fabricated with active-area efficiencies of 13.7%--the highest reported to date for any thin-film amorphous solar cell. Degradation rates of 12%--17% after 300 hours illumination were measured in triple-junction cells, a significant increase over the degradation of single-junction cells with comparable efficiencies. A triple-junction module with a subaperture area of 818 cm(sup 2) was measured at SERI with a conversion efficiency of 8.4%. 27 refs., 72 figs., 15 tabs. (ERA citation 15:048464)

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