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Characteristics of Lift-off Fabricated AlGaAs/INGaAs Single-Strained-Quantum-Well Structures on Glass and Silicon Substrates

机译：玻璃和硅衬底上剥离制备alGaas / INGaas单应变量子阱结构的特性

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A technique involving the liftoff of thin (/approx/1 /mu/m) III-V structures grown on GaAs substrates and subsequent bonding to glass or SiO2-covered Si substrates has been investigated. AlGaAs/InGaAs/GaAs single-strained-quantum-well structures have been grown by molecular beam epitaxy and characterized before and after lift-off and bonding to foreign substrates. X-ray diffraction measurements were performed to determine the strain state of the films over a wide temperature range after bonding. Low-temperature photoluminescence measurements on 125/angstrom/-well undoped structures show that the narrow linewidths observed in the as-grown samples (/approx/4 MeV) are not broadened by the lift-off and bonding process. Room- and low-temperature dc measurements made on modulation-doped field-effect transistors show that electronic transport properties are not adversely affected by this process. 8 refs., 6 figs. (ERA citation 14:001093)

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Klem, J. F. ; Jones, E. D. ; Myers, D. R. ; Lott, J. A.;
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年度 1988
页码 1-10
总页数 10
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Aluminium Arsenides; Gallium Arsenides; Indium Arsenides; Bonding; Films; Glass; Hysteresis; Molecular Beam Epitaxy; Photoluminescence; Semiconductor Materials; Silicon; Substrates; Thermal Expansion;

机译：砷化铝;砷化镓;砷化铟;键合;薄膜;玻璃;磁滞;分子束外延;光致发光;半导体材料;硅;衬底;热膨胀;

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4. Asymmetric double grating gate detector fabricated on industrial pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructure [C] . Di Gaspare A., Casini R., Diakonova N., International Conference on Infrared, Millimeter, and Terahertz Waves;IRMMW-THz 2012 . 2012

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5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

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6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

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7. Erratum: “Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array” Appl. Phys. Lett. 71, 1655 (1997) [O] . Eiichi Kuramochi, Jiro Temmyo, Toshiaki Tamamura, 1997

机译：错误：“使用氮化硅点阵列的GaAs（311）B衬底上的自组织Ingaas / Algaas盒状结构阵列的完美空间排序”Appl。物理。吧。 71,1655（1997）
8. InGaAs/AlGaAs Intersubband Transition Structures Grown on InAlAs Buffer Layers on GaAs Substrates by Molecular Beam Epitaxy [R] . Katzer, D. S. , Rabinovich, W. S. , Beadie, G. 2000

机译：通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构

Characteristics of Lift-off Fabricated AlGaAs/INGaAs Single-Strained-Quantum-Well Structures on Glass and Silicon Substrates

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