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Laser Studies of the SiH Radical/Surface Interaction during Deposition of a Thin Film

机译:薄膜沉积过程中siH自由基/表面相互作用的激光研究

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This paper presents a new method for studying the interaction of radicals with the surface of a depositing film using a combination of laser spectroscopy and molecular beam techniques. The reactivity of SiH molecules with the surface of a depositing a-Si:H film is measured to be at least 0.95, with no significant dependence on rotational state. 9 refs., 3 figs. (ERA citation 14:012351)

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