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首页> 美国政府科技报告 >Site Occupancy/Valence Measurements Using Channelling and Related Effects in Microanalysis.
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Site Occupancy/Valence Measurements Using Channelling and Related Effects in Microanalysis.

机译：在微量分析中使用通道和相关效应的场地占用/价态测量。

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摘要

The current status of a novel crystallographic technique to determine specific-site occupations of elemental additions in crystalline materials, using the channelling or Borrman effect in electron diffraction is discussed. This technique is based on the effect of incident beam orientations on the intensities of either the characteristic x-ray emissions or the characteristic electron energy-loss edges. In general, this technique is in good agreement with other well established methods such as x-ray and neutron diffraction but has superior spatial resolution. It involves no adjustable parameters, external standards or special specimen preparations; can distinguish neighbors in the periodic table; is very accurate and is applicable to trace elemental concentrations. In the Electron energy loss spectroscopy (EELS) formulation, the technique can also provide specific site valence information. Finally, the applicability to the study of site occupancies in magnetic materials (spinels, Sm sub 2 (transition metals-Co,TM) sub 17 alloys, (rare earths-Y,RE) sub 3 Fe sub 5 O sub 12 epitaxial films, etc.) has been well demonstrated. 23 refs., 3 figs. (ERA citation 14:022497)

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