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Breathing Mode Lattice Relaxation Associated with Carrier Emission and Capture by Deep Electronic Levels in Silicon

机译：呼吸模式晶格弛豫与硅中深层电子能级的载流子发射和捕获相关

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The breathing mode (volume) lattice relaxations associated with carrier emission and capture are evaluated for a variety of deep levels in silicon using a recently proposed method based on high pressure measurement of the emission rates and capture cross sections. Included are (1) the vacancy-like acceptor levels associated with the oxygen-vacancy pair (or A-center) and the gold, platinum and palladium impurities, (2) the chalcogenide donors in their singly- and doubly-charged states and (3) a number of 3d transition metal donors. The signs and magnitudes (which range from approx.0 to 5A sup 3 /emitted carrier) of these relaxations are discussed in terms of models for the impurities and defects responsible for the associated levels. The results on the chalcogenides are compared with recent theoretical calculations. 8 refs., 1 tab. (ERA citation 13:018706)

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