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首页> 美国政府科技报告 >Reemission, Trapping, and Desorption of Implanted Deuterium from JET Samples
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Reemission, Trapping, and Desorption of Implanted Deuterium from JET Samples

机译：JET样品中植入氘的再发射，捕获和解吸

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Gas reemission from first-wall samples of JET was measured during 1-22 keV deuterium ion bombardment. The sample temperature was varied between room temperature and 970 K. The samples were pieces taken from the 1984-graphite limiter and 6 long-term samples (LTS) of Inconel and Ni. The near surface deuterium inventory was determined by nuclear reaction analysis (NRA). In some cases thermal desorption spectra of the implanted samples were taken. No significant differences were found between samples from different positions in the torus. Instantaneous reemission is found for low-energy (1 keV) D/sup +/-bombardment of the limiter samples due to diffusion in the deposited impurity layer. Limiter samples that have been implanted to saturation at room temperature show a release peak when further bombarded at a higher temperature. On Inconel LTS the reemission time constant tau/sub R/ is found to decrease with increasing flux. The accumulated D inventory is only partly trapped within the ion range. On Ni-LTS the deposited impurity layer undergoes a modification when the sample is heated from 250/deg/C to 317/deg/C increasing the trapped D inventory by almost two orders of magnitude. (ERA citation 12:021991)

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