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首页> 美国政府科技报告 >Research on High-Efficiency, Stacked, Multijunction, Amorphous Silicon Alloy Thin-Film Solar Cells. A Semiannual Subcontract Progress Report, 1 October 1984-15 May 1985
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Research on High-Efficiency, Stacked, Multijunction, Amorphous Silicon Alloy Thin-Film Solar Cells. A Semiannual Subcontract Progress Report, 1 October 1984-15 May 1985

机译：高效，堆叠，多结，非晶硅合金薄膜太阳能电池的研究。半年度分包合同进度报告，1984年10月1日至1985年5月15日

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This technical progress report to the Solar Energy Research Institute covers work on high-efficiency, stacked, multijunction amorphous silicone alloy thin-film solar cells. Material growth was begun in a multisector reactor. The a-Si:H films grown in this reactor were very high quality, as shown in their high ratio of photo-to-dark conductivity and very low dark conductivity. High-band-gap a-Si:H films were achieved by using H etching of films during growth. H sub 2 dilution in the plasma led to a sharpening of the valence band tail in both a-Si:H and a-(Si,Ge):H films. No SiH sub 2 bonds were observed after Ge was added to the a-Si:H. Experiments were begun to develop a two-level, stable back contact to a-Si:H. Preliminary results indicate that a Cr/Pd contact may be stable and moderately reflecting, but the best reflection was obtained with Ag. Mo appears to be a suitable, stable contact to SnO sub 2 . A critical parameter in achieving 8.5% efficient a-Si:H devices was plasma-cleaning between deposition of the p- and i-layers. 6.5% efficient a-(Si,Ge):H devices were also grown. Two types of tandem cells were fabricated. (ERA citation 11:011169)

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