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Enhanced Diffusion from Interstitial Trapping During Solid-Phase-Epitaxial Growth of Silicon Alloys. Draft

机译：硅合金固相外延生长过程中间隙捕获的增强扩散。草案

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During the recrystallization by solid-phase-epitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, we propose that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing. (ERA citation 10:002776)

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Pennycook, S. J.; Narayan, J.; Holland, O. W.;
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年度 1984
页码 1-17
总页数 17
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Silicon; Diffusion; Interstitials; Crystal Doping; Crystal Growth; Epitaxy; Ion Implantation; Production; Silicon Alloys; Supersaturation; Transients; Trapping;

机译：硅;扩散;间隙;晶体掺杂;晶体生长;外延;离子注入;生产;硅合金;过饱和;瞬态;陷阱;

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1. Trap-limited interstitial diffusion and enhanced boron clustering in silicon [J] . P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, Applied Physics Letters . 1995,第5期

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2. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation [J] . Sandeep S. Saseendran, S. Saravanan, Mehul C. Raval, Journal of Applied Physics . 2016,第9期

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3. Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices [J] . Yasuo Shimizu, Masashi Uematsu, Kohei M. ltoh, Journal of Applied Physics . 2009,第1期

机译：同位素超晶格研究硅中性和带电硅自填隙在瞬态增强扩散过程中的行为
4. Complete Suppression of the Transient Enhanced Diffusion of B Implanted in Preamorphized Si by Interstitial Trapping in a Spatially Separated C-Rich Layer [C] . E. Napolitani, A. Coati, D. De Salvador, Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California . 2002

机译：通过空间分隔的富C层中的间隙俘获，完全抑制植入非晶态硅中的B的瞬态增强扩散。
5. Effect of surface modification, microstructure, and trapping on hydrogen diffusion coefficients in high strength alloys. [D] . Jebaraj Johnley Muthuraj, Josiah. 2015

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6. Strongly enhanced light trapping in a two-dimensional silicon nanowire random fractal array [O] . Barbara Fazio, Pietro Artoni, Maria Antonia Iatì, 2016

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7. Nano Vacancy Clusters and Trap Limited Diffusion of Si Interstitials in Silicon [O] . Chu, Prof. Wei-Kan 2010

机译：纳米空位团簇和陷阱限制硅间隙si扩散

Enhanced Diffusion from Interstitial Trapping During Solid-Phase-Epitaxial Growth of Silicon Alloys. Draft

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