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首页> 美国政府科技报告 >Improvements in Avalanche-Transistor Sweep Circuitry for Electrooptic Streak Cameras
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Improvements in Avalanche-Transistor Sweep Circuitry for Electrooptic Streak Cameras

机译：用于电光条纹相机的雪崩 - 晶体管扫描电路的改进

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We have improved the performance of the avalanche-transistor deflector-driver (sweep) circuitry used in the high-speed, electrooptic streak camera at Lawrence Livermore National Laboratory (LLNL). In the previous design for the sweep circuit, trigger-to-output delay time drifted on some cameras. This delay drift is a function of a somewhat randomly unstable breakdown voltage of some avalanche transistors. Both temperature and differences in manufacturing methods for transistors affect this instability. However, a significant improvement in system performance is achieved by long-term burn in and by selection of only the most stable transistors for the sweep circuit. The peak-to-peak sweep voltage has been increased about 80% by increasing the number of avalanche transistors in the string and raising the Q of the resonant circuit. The result is an improvement in sweep uniformity by a factor of approximately 2. Design equations for selecting components are given. Fast-recovery diodes are used to prevent undershoot and to keep the beam out of the intensifier field of view until after the intensifier is gated off. The sweep time range has been extended to over 100 ns. (ERA citation 09:046531)

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