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Radiation-Enhanced Diffusion in Ion-Implanted Glasses and Glass/Metal Couples

机译:离子注入玻璃和玻璃/金属耦合中的辐射增强扩散

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Ion implantation causes alkali migration to the surface in alkali silicate glasses. Rutherford backscattering spectrometry was used to follow this depletion. Room temperature implantations of 5 x 10 exp 16 250 keV Xe/cm exp 2 in 12M sub 2 0.88SiO sub 2 (M = Li, Na, K, Rb, Cs) removes approximately equal numbers (within a factor of 2) of alkali from the glass. Low temperature (77K) implants significantly reduce the alkali loss. These results imply a radiation-enhanced diffusion mechanism in which the alkali interchanges with the products of the collision cascade, with the kinetics being limited by the radiation damage components. The results for mixed-alkali glasses ((12-x)M sub 2 O.xCs sub 2 0.88Si0 sub 2 ) give further evidence for this process. In glass/metal couples, radiation enhanced diffusion allows the interchange of glass network components with deposited metals. Rutherford backscattering spectrometry was used to follow the interchange of silicate and phosphate glass components with metal ions near the heavy-ion implanted interface between glass substrate and metal (Al,Zr) films. (ERA citation 09:003965)

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