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Pinning of Charge Density Waves by Irradiation Induced Defects in Orthorhombic TaS sub 3

机译:在正交Tas sub 3中通过辐照诱导的缺陷钉扎电荷密度波

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The effects of electron irradiation induced damage on dc conductivity, threshold field and complex dielectric constant of TaS sub 3 crystals at 9 GHz are investigated in a wide temperature range. Whereas the single particle gap in the low temperature phase is not influenced by irradiation, transport properties associated with collective excitation of charge density waves (CDW) are sensitive to the presence of new pinning centres. The results are discussed in the framework of the semiclassical model of Gruener, Zawadowski and Chaikin. The pinning frequency determined from the threshold field agrees well with that calculated from the complex dielectric constant. (Atomindex citation 15:047790)

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