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首页> 美国政府科技报告 >Comparison of the Ta sub 2 N--Cr--Au and Ta sub 2 N--Cr--Pd--Au Hybrid Metallization Systems--Dc Electrical Properties,Resistor Aging,Corrosion Resistance,and Chromium Layer Depletion Studies.
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Comparison of the Ta sub 2 N--Cr--Au and Ta sub 2 N--Cr--Pd--Au Hybrid Metallization Systems--Dc Electrical Properties,Resistor Aging,Corrosion Resistance,and Chromium Layer Depletion Studies.

机译：Ta sub 2 N - Cr - au和Ta sub 2 N - Cr - pd - au杂化金属化体系的比较 - Dc电性能，电阻器老化，耐腐蚀性和铬层耗尽研究。

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In an attempt to overcome some of the deficiencies of Ta sub 2 N--Cr--Au thin films (400, 300,and 60,000 A,respectively),an alternate metallization incorporating palladium, i.e.,Ta sub 2 N--Cr--Pd--Au (400, 300, 500,and 60,000 A,respectively),was evaluated on a comparative basis with the standard system. Comparable results were obtained in tantalum resistor aging studies and temperature coefficient of resistance (TCR). The conductor resistance was slightly higher,and the contact resistance to the tantalum nitride was about 50% higher for the alternate system. The addition of 500 A of palladium slowed down the chromium diffusion during the two hour, 300exp 0 C resistor stabilization step,although after six hours at 300exp 0 C,the chromium diffusion was greater. It was still necessary to etch the chromium oxide to obtain good lead bonds and,furthermore,the alternate system was more vulnerable to chromium layer attack by the etchant than the standard system. Later studies showed that with 2000 A of palladium,the chromium diffusion was slowed sufficiently that the oxide etch step could be eliminated and good lead bond strengths attained. The iodine sensitivity was effectively eliminated by the addition of 500 A or 2000 A of palladium and the resistance to HCl vapor was improved. If the processing times at high temperatures can be kept short and the chromium oxide etch step eliminated,the alternate metallization should be an improvement over the Ta sub 2 N--Cr--Au system. (ERA citation 04:019829)

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