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首页> 美国政府科技报告 >Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Micro-Field Exposure Tool (MET). Conference: SPIE - Extreme Ultraviolet (EUV) Lithography V, San Jose, CA, February 23, 2014; Related Information: Journal.Publication Date: 90481M.
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Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Micro-Field Exposure Tool (MET). Conference: SPIE - Extreme Ultraviolet (EUV) Lithography V, San Jose, CA, February 23, 2014; Related Information: Journal.Publication Date: 90481M.

机译：更新sEmaTECH 0.5 Na极紫外光刻（EUVL）微场曝光工具（mET）。会议：spIE - 极紫外（EUV）光刻V，加利福尼亚州圣何塞，2014年2月23日;相关信息：Journal.publication日期：90481m。

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摘要

In support of the Extreme Ultraviolet Lithography (EUVL) roadmap, a SEMATECH/CNSE joint program is underway to produce multiple EUVL (wavelength of 13.5 nm) R&D photolithography tools. The 0.5 NA projection optic magnification (5X), track length and mechanical interfaces match the currently installed 0.3 NA micro-field exposure tools (MET) projection optic [1] [2] [3], Therefore, significant changes to the current tool platforms and other adjacent modules are not necessary. However, many of the existing systems do need upgrades to achieve the anticipated smaller exposure feature sizes [4], To date we have made considerable progress in the production of the first of the two-mirror 0.5 NA projection optics for EUVL [5], With a measured transmitted wavefront error of less than 1 nm root mean square (RMS) over its 30 pm x 200 pm image field, lithography modeling shows that a predicted resolution of < 12 nm and an ultimate resolution of 8 nm (with extreme dipole illumination) will be possible.

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