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首页> 美国政府科技报告 >Microstructure and nonstoichiometry of barium strontium titanate thin films for211 dram applications
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Microstructure and nonstoichiometry of barium strontium titanate thin films for211 dram applications

机译：用于211 dram应用的钛酸锶钡薄膜的微观结构和非化学计量

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In this paper we investigate the microstructural accommodation of211u001enonstoichiometry in (Ba(sub x)Sr(sub 1(minus)x)Ti(sub 1+y)O(sub 3+z)) thin films 211u001egrown by chemical vapor deposition. Films with three different (Ba+Sr)/Ti ratios 211u001eof 49/51 (y=0.04 in the notation of the formula above), of 48/52 (y=0.08) and of 211u001e46.5/53.5 (y=O.15), were studied. High-resolution electron microscopy is used to 211u001estudy the microstructure of the BST films. High-spatial resolution electron 211u001eenergy-loss spectroscopy (EELS) is used to reveal changes in chemistry and local 211u001eatomic environment both at grain boundaries and within grains as a function of 211u001etitanium excess. We find an amorphous phase at the grain boundaries and grain 211u001eboundary segregation of excess titanium in the samples with y=0.15. In addition, 211u001eEELS is also used to show that excess titanium is being partially accommodated in 211u001ethe grain interior. Implications for the film electrical and dielectric 211u001eproperties are outlined.

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