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Nitrogen-Induced Modification of the Electronic Structure of Group III-N-V211 Alloys: Preprint

机译:氮诱导的III-N-V211合金电子结构的改性:预印

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Incorporation of nitrogen in conventional III-V compound semiconductors to form211u001eIII-N-V alloys leads to a splitting of the conduction band into two nonparabolic 211u001esub-bands. The splitting can be described in terms of an anticrossing interaction 211u001ebetween a narrow band of localized nitrogen states and the extended conduction-211u001eband states of the semiconductor matrix. The downward shift of the lower sub-band 211u001eedge is responsible for the N-induced reduction of the fundamental band-gap 211u001eenergy. The modification of the conduction-band structure profoundly affects the 211u001eoptical and electrical properties of the III-N-V alloys.

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