Gate drive circuit for gate-turn-off (GTO) devices in series stack

机译：用于串联堆叠的栅极关断（GTO）器件的栅极驱动电路

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摘要

A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate driver circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements.

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作者
Despe, O.;
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年度 1999
页码 1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Electric switches; Meetings; Stacksgs; Electric potential; Requirements;

机译：电气开关;会议; stacksgs;电势;要求;

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专利

1. Device Characteristics and Equivalent Circuits for NMOS Gate-to-Drain Soft and Hard Breakdown in Polysilicon/SiON Gate Stacks [J] . Nicollian P. E., Cakici R. T., Krishnan A. T., Electron Devices, IEEE Transactions on . 2011,第4期

机译：多晶硅/ SiON栅极叠层中NMOS栅极至漏极软击穿和硬击穿的器件特性和等效电路
2. High-Density Reduced-Stack Logic Circuit Techniques Using Independent-Gate Controlled Double-Gate Devices [J] . Meng-Hsueh Chiang, Keunwoo Kim, Ching-Te Chuang, IEEE Transactions on Electron Devices . 2006,第9期

机译：使用独立门控双门器件的高密度精简堆栈逻辑电路技术
3. Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach [J] . S Chakraborty, A Dasgupta, R Das, Journal of Semiconductors . 2017,第12期

机译：具有基于查找表的方法的带栅极堆叠的子20 nm双栅MOSFET的装置和电路分析
4. A gate drive circuit for gate-turn-off (GTO) devices in series stack [C] . Despe, O., Wang, . 1999

机译：用于串联堆叠的栅极截止（GTO）器件的栅极驱动电路
5. A series-parallel resonant topology and new gate drive circuits for low voltage dc to dc converter. [D] . Xu, Kai. 2008

机译：串联并联谐振拓扑和用于低压DC-DC转换器的新型栅极驱动电路。
6. Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits [O] . Yiming Li, Chieh-Yang Chen, Min-Hui Chuang, 2019

机译：随机纳米氮化钛晶粒引起的动态功率延迟的特性波动以及全能门纳米线CMOS器件和电路的纵横比效应
7. A Gate Drive Circuit for Gate-Turn-Off (GTO) Devices in Series Stack [O] . Despe, O, Wang, J 1999

机译：串联堆栈中的栅极截止（GTO）器件的栅极驱动电路

Gate drive circuit for gate-turn-off (GTO) devices in series stack

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