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Studies of ferroelectric heterostructure thin films and interfaces via in situ211 analytical techniques

机译：studies of ferroelectric heterostructure thin films and interfaces via in situ211 analytical techniques

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The science and technology of ferroelectric thin films has experienced an211u001eexplosive development during the last ten years. Low-density non-volatile 211u001eferroelectric random access memories (NVFRAMs) are now incorporated in commercial 211u001eproducts such as 'smart cards', while high permittivity capacitors are 211u001eincorporated in cellular phones. However, substantial work is still needed to 211u001edevelop materials integration strategies for high-density memories. We have 211u001edemonstrated that the implementation of complementary in situ characterization 211u001etechniques is critical to understand film growth and interface processes, which 211u001eplay critical roles in film microstructure and properties. We are using uniquely 211u001eintegrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and 211u001espectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies 211u001eof film growth processes in the high background gas pressure required to growth 211u001eferroelectric thin films. TOF-ISARS provides information on surface processes, 211u001ewhile SE permits the investigation of buried interfaces as they are being formed. 211u001eRecent studies on SrBi(sub 2)Ta(sub 2)O(sub 9) (SBT) and Ba(sub x)Sr(sub 211u001e1(minus)x)TiO(sub 3) (BST) film growth and interface processes are discussed.

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