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Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor; Applied Physics Letters

机译：GaN / alGaN异质结双极晶体管的生长与制备;应用物理快报

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A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (;4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (;90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ;10 were obtained at 300 degree C.

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Abernathy, C. R. ; Baca, A. G. ; Cao, X. A. ; Cho, H. ; Dang, G. T.;
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年度 1999
页码 1-15
总页数 15
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Transistors; Crystal growth; Heterojunctions; Gallium Nitrides; Aluminium Nitrides; Fabrication;

机译：晶体管;晶体生长;异质结;氮化镓;氮化铝;制造;

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专利

1. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer [J] . Z. Chen, Y. Pei, S. Newman, Applied Physicsletters . 2009,第11期

机译：使用AlGaN中间层在半绝缘GaN上生长AlGaN / GaN异质结场效应晶体管
2. High performance pnp AlGaN/GaN heterojunction bipolar transistors on GaN substrates [J] . Kazuhide Kumakura, Toshiki Makimoto Applied Physicsletters . 2008,第15期

机译：GaN衬底上的高性能pnp AlGaN / GaN异质结双极晶体管
3. High-voltage operation with high current gain of pnp AlGaN/GaN heterojunction bipolar transistors with thin n-type GaN base [J] . Kazuhide Kumakura, Toshiki Makimoto Applied Physics Letters . 2005,第2期

机译：具有薄n型GaN基极的pnp AlGaN / GaN异质结双极晶体管的高电流增益的高电压操作
4. Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth [C] . Jay M. Shah, Thomas Gessmann, Hong Luo, Symposium on GaN, AIN, InN and Related Materials . 2006

机译：使用GaInn基帽层和选择性外延生长减少AlGaN / GaN异质结双极晶体管中的基础访问电阻
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts [O] . Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, 2018

机译：具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
7. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor [O] . J. Han, A. G. Baca, R. J. Shul, 1999

机译：GaN / Algan异质结双极晶体管的生长和制造

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor; Applied Physics Letters

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