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首页> 美国政府科技报告 >Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-211 Film PV Devices; Annual Report, 26 January 1998-25 January 1999
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Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-211 Film PV Devices; Annual Report, 26 January 1998-25 January 1999

机译：用于高效薄膜211薄膜光伏器件的大气压化学气相沉积CdTe;年度报告，1998年1月26日至1999年1月25日

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摘要

ITN's 3-year project, titled 'Atmospheric Pressure Chemical Vapor Deposition211u001e(APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,' has the 211u001eoverall objectives of improving thin-film CdTe PV manufacturing technology and 211u001eincreasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD 211u001eemploys the same reaction chemistry as has been used to deposit 16%-efficient 211u001eCdTe PV films, i.e., close-spaced sublimation, but employs forced convection 211u001erather than diffusion as a mechanism of mass transport. Tasks of the APCVD 211u001eprogram center on demonstrating APCVD of CdTe films, discovering fundamental mass-211u001etransport parameters, applying established engineering principles to the 211u001edeposition of CdTe films, and verifying reactor design principles that could be 211u001eused to design high-throughput, high-yield manufacturing equipment. Additional 211u001etasks relate to improved device measurement and characterization procedures that 211u001ecan lead to a more fundamental understanding of CdTe PV device operation, and 211u001eultimately, to higher device conversion efficiency and greater stability. 211u001eSpecifically, under the APCVD program, device analysis goes beyond conventional 211u001eone-dimensional device characterization and analysis toward two-dimension 211u001emeasurements and modeling. Accomplishments of the first year of the APCVD 211u001esubcontract include: selection of the Stagnant Flow Reactor design concept for 211u001ethe APCVD reactor, development of a detailed reactor design, performance of 211u001edetailed numerical calculations simulating reactor performance, fabrication and 211u001einstallation of an APCVD reactor, performance of dry runs to verify reactor 211u001eperformance, performance of one-dimensional modeling of CdTe PV device 211u001eperformance, and development of a detailed plan for quantification of grain-211u001eboundary effects in polycrystalline CdTe devices.

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