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Growth of thin film for waveguide laser: Development of chromium doped Zn chalcogenides as efficient, widely tunable mid-infrared lasers

机译：用于波导激光器的薄膜的生长：铬掺杂的Zn硫属元素化物的开发是有效的，可广泛调谐的中红外激光器

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The incorporation of chromium in wide bandgap semiconductors is becoming a topic of interest in the development of efficient and compact tunable (range of 2--3 (micro)m) solid state mid-infrared lasers operating at room temperature. IN the search for optimized procedures of doping that will raise the chromium concentration to a level of 10(sup 20) ions/cm(sup 3), the authors have developed a diffusion process in the temperature range of 750--950 C. However, optimization needs to be made during this process to preserve the optical transparency of the doped samples. The experimental data will be discussed in terms of dopant diffusivity, distribution of defects and crystal homogeneity.

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