首页> 美国政府科技报告 >Project Final Report, Doping Cu2O in Electrolyte Solution: Dopant Incorporation, Atomic Structures and Electrical Properties, Report Period: April 15, 2009-January 15, 2012.

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Project Final Report, Doping Cu2O in Electrolyte Solution: Dopant Incorporation, Atomic Structures and Electrical Properties, Report Period: April 15, 2009-January 15, 2012.

机译：项目最终报告，在电解质溶液中掺杂Cu2O：掺杂剂掺入，原子结构和电性能，报告期：2009年4月15日 - 2012年1月15日。

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We have pursued a number of research activities between April 2010 and April 2011: A detailed study on n-type doping in Cu2O by Br; An analysis of natural resource limitations to terawatt-scale solar cells; Attempt to achieve a 1.4-eV direct band gap in Ni sulfides (NiSx); First-principles studies of doping in Cu2O and electronic structures of NiSx. The following is a more detailed description of these activities.

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作者
Tao, M.; Zhang, Q.;
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年度 2013
页码 1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Solar cells; Doped materials; Atomic structures; Copper oxides; Electrolytes; Electronic structure; Sulfides;

机译：太阳能电池;掺杂材料;原子结构;铜氧化物;电解质;电子结构;硫化物;

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4. Doping Cu{sub 2}O in Electrolyte Solution: Dopant Incorporation, Atomic Structures and Electrical Properties [O] . Tao, Meng, Zhang, Qiming 2013

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Project Final Report, Doping Cu2O in Electrolyte Solution: Dopant Incorporation, Atomic Structures and Electrical Properties, Report Period: April 15, 2009-January 15, 2012.

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