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首页> 美国政府科技报告 >Industrial and scientific technology research and development project in fiscal 1997 commissioned by the New Energy and Industrial Technology Development Organization. Research and development of superconducting materials and transistors (report on overal
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Industrial and scientific technology research and development project in fiscal 1997 commissioned by the New Energy and Industrial Technology Development Organization. Research and development of superconducting materials and transistors (report on overal

机译：1997年财政年度由新能源和工业技术发展组织委托的工业和科学技术研究和开发项目。研究和开发超导材料和晶体管（报告总体情况

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This paper describes development of superconducting new function transistors. Fiscal 1997 as the final year of the project advanced improvement in such transistor-using processes as formation and micro-processing of superconducting thin films to show enhancement in characteristics of high- temperature superconducting transistors and possibility of their application utilizing their high speed motions. Furthermore, fundamental technologies were studied with an aim on junction transistors to be applied as circuits. For field effect transistors, evaluation was performed on critical current distribution of step-type particle boundary junction to make it possible to evaluate characteristics of hundreds of transistors. At the same time, a magnetic flux quantum parametron gate with three-layer structure was fabricated to identify its operation. In superconducting-base transistors, strong reflection was recognized on temperature dependence of permittivity of an Nb- doped strontium titanate substrate used for collectors, by which barrier height was reduced. In the junction transistor and circuit technology, isotropic ramp- edge junctions were fabricated, and so was a frequency divider circuit with single magnetic flux quantum mode operation for evaluating high-speed response characteristics. High time resolution current was observed successfully by using a high-temperature superconducting sampler system. 148 refs., 127 figs., 4 tabs.

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